Electronic component package

ABSTRACT

An electronic component package includes: a frame, including a through-hole and a through-wiring; an electronic component disposed in the through-hole of the frame; a metal plate disposed on a first side of the electronic component and the frame; and a redistribution layer disposed on a second side of the electronic component opposing the first side and electrically connected to the electronic component.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims the benefit of priority to Korean PatentApplication No. 10-2016-0039274, filed on Mar. 31, 2016 in the KoreanIntellectual Property Office, the entire disclosure of which isincorporated herein by reference.

BACKGROUND 1. Technical Field

The present disclosure relates to an electronic component package.

2. Description of Related Art

An electronic component package is defined as a package technology forelectrically connecting an electronic component to a printed circuitboard (PCB), such as a main board of an electronic device or the like,and protecting the electronic component from external impacts. Onerecent main trend in the development of technology related to electroniccomponents is to reduce the size of the electronic components. As such,in the package field, and in accordance with a rapid increase in demandfor miniaturized electronic components or the like, there has beenincreased demand for the implementation of an electronic componentpackage having a compact size and including a plurality of pins.

One package technology suggested in order to satisfy the technicaldemand described above is a wafer level package (WLP) using theredistribution of an electrode pad of an electronic component formed ona wafer. Examples of the wafer level package include a fan-in waferlevel package and a fan-out wafer level package. In particular, thefan-out wafer level package has a compact size and is advantageous inimplementing a plurality of pins. Therefore, recently, the fan-out waferlevel package has been actively developed.

SUMMARY

An aspect of the present disclosure may provide an electronic componentpackage in which heat generated in an electronic component may beeffectively radiated.

One of several solutions suggested through the present disclosure may beto use a metal plate. According to an aspect of the present disclosure,an electronic component package may include: a frame including athrough-hole and a through-wiring; an electronic component disposed inthe through-hole of the frame; a metal plate disposed on a first side ofthe electronic component and the frame; and a redistribution layerdisposed on a second side of the electronic component opposing the firstside and electrically connected to the electronic component.

The electronic component package may further include a first adhesivelayer interposed between the metal plate and the electronic component.

The first adhesive layer may be formed of conductive epoxy.

The metal plate and the electronic component may directly contact eachother.

The electronic component package may further include a second adhesivelayer interposed between the metal plate and the frame.

The second adhesive layer may be formed of solder.

The electronic component package may further include a first adhesivelayer interposed between the metal plate and the electronic componentand a second adhesive layer interposed between the metal plate and theframe. The first and second adhesive layers may be formed of differentmaterials.

The frame may include a wiring layer formed on an upper surface thereof,and the metal plate and the wiring layer may directly contact eachother.

The number of through-wirings may be plural, and the metal plate may beelectrically connected to some of the plurality of through-wirings andbe electrically disconnected from the others, of the plurality ofthrough-wirings.

The metal plate may be electrically disconnected from the electroniccomponent.

The electronic component package may further include an insulating layerformed on the electronic component and the metal plate.

The insulating layer may be formed on and beneath the metal plate, andthe metal plate may be embedded in the insulating layer.

The insulating layer may include a conductive via connected to thethrough-wiring of the frame.

The conductive via of the insulating layer may penetrate through themetal plate and be electrically disconnected from the metal plate.

The electronic component package may further include an encapsulantfilled in the through-hole to encapsulate the electronic component.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages of the presentdisclosure will be more clearly understood from the following detaileddescription, taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a schematic block diagram illustrating an example of anelectronic device system;

FIG. 2 is a schematic view illustrating an example of an electroniccomponent package used in an electronic device;

FIG. 3 is a schematic cross-sectional view illustrating an example of anelectronic component package;

FIGS. 4 and 5 are schematic cross-sectional views illustrating modifiedversions of the electronic component package of FIG. 3; and

FIG. 6 is a schematic cross-sectional view illustrating another exampleof an electronic component package.

DETAILED DESCRIPTION

Hereinafter, exemplary embodiments in the present disclosure will bedescribed with reference to the accompanying drawings. In theaccompanying drawings, shapes, sizes, and the like, of components may beexaggerated or shortened for clarity.

Electronic Device

FIG. 1 is a schematic block diagram illustrating an example of anelectronic device system.

Referring to FIG. 1, an electronic device 1000 may accommodate amotherboard 1010 therein. The motherboard 1010 may include chip-relatedcomponents 1020, network-related components 1030, other components 1040,and the like, physically or electrically connected thereto. Thesecomponents may be connected to other components, to be described below,to form various signal lines 1090.

The chip-related components 1020 may include a memory chip, such as avolatile memory (for example, a dynamic random access memory (DRAM)), anon-volatile memory (for example, a read only memory (ROM)), a flashmemory, etc.; an application processor chip, such as a central processor(for example, a central processing unit (CPU)), a graphics processor(for example, a graphic processing unit (GPU)), a digital signalprocessor, a cryptographic processor, a microprocessor, amicrocontroller, etc.; a logic chip, such as an analog-to-digitalconverter, an application-specific integrated circuit (ASIC), etc.; andthe like. However, the chip related components 1020 are not limitedthereto, but may also include other types of chip related components. Inaddition, the chip-related components 1020 may be combined with eachother.

The network-related components 1030 may include protocols, such aswireless fidelity (Wi-Fi) (Institute of Electrical and ElectronicsEngineers (IEEE) 802.11 family or the like), worldwide interoperabilityfor microwave access (WiMAX) (IEEE 802.16 family or the like), IEEE802.20, longterm evolution (LTE), evolution data only (Ev-DO), highspeed packet access+(HSPA+), high speed downlink packet access+(HSDPA+),high speed uplink packet access+(HSUPA+), enhanced data GSM environment(EDGE), global system for mobile communications (GSM), globalpositioning system (GPS), general packet radio service (GPRS), codedivision multiple access (CDMA), time division multiple access (TDMA),digital enhanced cordless telecommunications (DECT), Bluetooth, 3G, 4G,5G protocols, and any other wireless and wired protocols designatedafter the above-mentioned protocols. However, the network-relatedcomponents 1030 are not limited thereto, but may also include any of aplurality of other wireless or wired standards or protocols. Inaddition, these components 1030 may be combined with each other,together with the chip-related components 1020 described above.

Other components 1040 may include a high frequency inductor, a ferriteinductor, a power inductor, ferrite beads, a low temperature co-firedceramic (LTCC), an electromagnetic interference (EMI) filter,amultilayer ceramic capacitor (MLCC) or the like. However, othercomponents 1040 are not limited thereto, but may also include passivecomponents used for various other purposes or the like. In addition,other components 1040 may be combined with each other, together with thechip-related components 1020 or the network-related components 1030described above.

Depending on a kind of the electronic device 1000, the electronic device1000 may include other components that may or may not be physically orelectrically connected to the motherboard 1010. These other componentsmay include, for example, a camera module 1050, an antenna 1060, adisplay 1070, a battery 1080, an audio codec (not illustrated), a videocodec (not illustrated), a power amplifier (not illustrated), a compass(not illustrated), an accelerometer (not illustrated), a gyroscope (notillustrated), a speaker (not illustrated), a mass storage device (forexample, a hard disk drive) (not illustrated), a compact disk (CD) (notillustrated), a digital versatile disk (DVD) (not illustrated), and thelike. However, these other components are not limited thereto, but mayalso include other components used for various purposes, depending on akind of electronic device 1000.

The electronic device 1000 may be a smartphone, a personal digitalassistant (PDA), a digital video camera, a digital still camera, anetwork system, a computer, a monitor, a tablet personal computer (PC),a laptop PC, a netbook PC, a television, a video game machine, asmartwatch or the like. However, the electronic device 1000 is notlimited thereto, and may be any other electronic device processing data.

FIG. 2 is a schematic view illustrating an example of an electroniccomponent package used in an electronic device.

The electronic component package may be used for various purposes in thevarious electronic devices 1000 described above. For example, a mainboard 1110 may be accommodated in a body 1101 of a smartphone 1100, andvarious electronic components 1120 may be physically or electricallyconnected to the main board 1110. In addition, other components that mayor may not be physically or electrically connected to the main board1110, such as a camera module 1130, may be accommodated in the body1101. In this case, some of the electronic components 1120 may be thechip-related components described above, and the electronic componentpackage 100 may be, for example, an application processor, among thechip related components, but is not limited thereto.

Electronic Component Package

FIG. 3 is a schematic cross-sectional view illustrating an example of anelectronic component package. FIGS. 4 and 5 are schematiccross-sectional views illustrating modified versions of the electroniccomponent package of FIG. 3.

Referring to FIG. 3, an electronic component package 100, according toan example, may include a frame 110, an electronic component 120, ametal plate 140, and a redistribution layer 150, as main componentsthereof.

A general electronic component package has a structure in which anelectronic component is molded with and surrounded by an encapsulant,such as an epoxy molding compound (EMC) or the like. In this case, mostof the heat generated in the electronic component is discharged downwardalong a redistribution layer, and only a very small amount of heat isconducted to the encapsulant, which has low thermal conductivity, suchthat heat radiation characteristics are deteriorated. In the presentexemplary embodiment, the metal plate 140 may be disposed on the frame110 and the electronic component 120 to easily diffuse heat generatedfrom the electronic component 120 or the like, and thus heat radiationcharacteristics may be improved.

In addition, in a case of adopting the structure in which the electroniccomponent is simply molded with and surrounded by the encapsulant, suchas the EMC or the like, operation characteristics, and the like, of anelectronic device in which the electronic component is mounted may bedeteriorated due to electromagnetic interference (EMI) caused by anelectromagnetic wave generated from the electronic component orintroduced from an external source. On the contrary, in the presentexemplary embodiment, the metal plate 140 may be disposed on theelectronic component 120 to block the electromagnetic wave, and thus, aproblem due to the EMI may also be prevented.

Hereinafter, the above-mentioned main components and additionalcomponents of the electronic component package 100 according to anexample will be described in more detail.

The frame 110, which is provided to support the electronic componentpackage 100, may maintain rigidity of the electronic component package100 and secure uniformity of a thickness of the electronic componentpackage 100, and may include a through-hole (a region in which theelectronic component 120 is disposed, in FIG. 3) and a plurality ofthrough-wirings 115. The frame 110 may have an upper surface 110A and alower surface 110B, opposing the upper surface 110A. In this case, thethrough-hole may penetrate between the upper surface 110A and the lowersurface 110B. The electronic component 120 may be disposed in thethrough-hole so as to be spaced apart from the frame 110 by apredetermined distance. As a result, side surfaces of the electroniccomponent 120 may be surrounded by the frame 110.

A material of the frame 110 is not particularly limited as long as theframe may support the electronic component package. For example, aninsulating material may be used as a material of the frame 110. In thiscase, the insulating material may be a thermosetting resin, such as anepoxy resin, a thermoplastic resin, such as a polyimide resin, a resinhaving a reinforcement material, such as a glass fiber, or an inorganicfiller impregnated in the thermosetting resin and the thermoplasticresin, such as pre-preg, Ajinomoto Buildup Film (ABF), FR-4,Bismaleimide Triazine (BT), copper clad laminate (CCL) or the like.Alternatively, a metal having excellent rigidity and thermalconductivity may be used as a material of the frame 110. In this case,the metal may be an Fe—Ni based alloy. In this case, a copper platingmay also be formed on a surface of the Fe—Ni based alloy in order tosecure adhesion between the Fe—Ni based alloy and a molding material, aninterlayer insulating material, or the like. In addition to thematerials described above, glass, ceramic, plastic or the like, may alsobe used as a material of the frame.

A thickness of the frame 110 in a cross section thereof is notparticularly limited, but may be designed depending on a thickness ofthe electronic component 120 in a cross section thereof. For example, athickness of the frame 110 in the cross section thereof may be about 100μm to 500 μm, depending on a kind of electronic component 120. The frame110 may include one layer or may include a plurality of layers. In thecase in which the frame 110 includes the plurality of layers, wiringlayers may be disposed between the plurality of layers. In this case,the thicknesses of respective layers are not particularly limited, andan entire thickness of the respective layers may be adjusted, asdescribed above.

As in a form illustrated in FIG. 3, the frame 110 may include a firstwiring layer 113 formed on the upper surface 110A thereof, a secondwiring layer 116 formed on an inner wall 110X thereof, a third wiringlayer 114 formed on the lower surface 110B thereof, and through-wirings115 penetrating therethrough. In this case, the number ofthrough-wirings 115 may be plural.

The first wiring layer 113 may serve as a redistribution pattern, and aconductive material, such as copper (Cu), aluminum (Al), silver (Ag),tin (Sn), gold (Au), nickel (Ni), lead (Pd), titanium (Ti), or alloysthereof, may be used as a material of the first wiring layer 113. Thefirst wiring layer 113 may perform various functions, depending on adesign of the corresponding layer. For example, the first wiring layer113 may serve as a ground pattern, a power pattern, a signal pattern,and the like. Here, the signal pattern may include various signalsexcept for the ground pattern, the power pattern, and the like, such asdata signals, and the like. In addition, the first wiring layer 113 mayserve as a via pad, a connection terminal pad, and the like. A thicknessof the first wiring layer 113 is not particularly limited, but may be,for example, about 10 μm to 50 μm.

The second wiring layer 116 may basically disperse heat generated fromthe electronic component 120 so as to be diffused toward the frame 110,and block an electromagnetic wave. The second wiring layer 116 may alsoperform various functions depending on a design thereof, and may serveas a ground pattern. The second wiring layer 116 may be disposed on theinner wall 110X of the frame 110. Therefore, the second wiring layer 116may surround the side surfaces of the electronic component 120. Thesecond wiring layer 116 may be formed to completely cover the inner wall110X of the frame 110. Copper (Cu), aluminum (Al), silver (Ag), tin(Sn), gold (Au), nickel (Ni), lead (Pd), titanium (Ti), or alloysthereof, may be used as a material of the second wiring layer 116.

The second wiring layer 116 may serve as a redistribution pattern, and aconductive material, such as copper (Cu), aluminum (Al), silver (Ag),tin (Sn), gold (Au), nickel (Ni), lead (Pd), titanium (Ti), or alloysthereof, may be used as a material of the second wiring layer 116. Thesecond wiring layer 116 may also perform various functions depending ona design of the corresponding layer. For example, the second wiringlayer 116 may serve as a ground pattern, a power pattern, a signalpattern, and the like. Similar to the first wiring layer 113, the signalpattern may include various signals except for the ground pattern, thepower pattern, and the like, such as data signals, and the like. Inaddition, the second wiring layer 116 may serve as a via pad, aconnection terminal pad, and the like. A thickness of the second wiringlayer 116 is also not particularly limited, but may be, for example,about 10 μm to 50 μm.

The through-wirings 115 may penetrate through the frame 110, and serveto electrically connect redistribution layers disposed on differentlayers in relation to the frame 110 to each other. A conductivematerial, such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn),gold (Au), nickel (Ni), lead (Pd), titanium (Ti), or alloys thereof, maybe used as materials of the through-wirings 115. Upper and lower sidesof the electronic component 120 may be electrically connected to eachother through left and right side surfaces of the electronic component120 via the through-wirings 115. Therefore, space utilization may besignificantly increased. In addition, the electronic component packagemay be applied to a package-on-package (PoP), a system-in-package (SiP)or the like, through connection in a three-dimensional structure, suchthat the electronic component package may be applied to various modules,package applied product groups or the like.

The number, an interval, a disposition form, and the like, ofthrough-wirings 115 are not particularly limited, but may besufficiently modified, depending on design particulars by those skilledin the art. The through-wirings 115 may be connected to pad patterns ofthe first and third wiring layers 113 and 114. For example, thethrough-wirings 115 may be disposed in an entire region of the frame110, depending on a form of another package mounted on the electroniccomponent package 100. Alternatively, the through-wirings 115 may bedisposed in only a specific region of the frame 110.

In a case in which a metal, such as an Fe—Ni based alloy or the like, isused as a material of the frame 110, an insulating material may bedisposed between the metal and the through-wirings 115 in order toelectrically insulate the metal and the through-wirings 115 from eachother. A shape of a cross section of the through-wiring 115 is notparticularly limited, but may be a known shape, such as a tapered shape,a sandglass shape, a pillar shape or the like. The through-wiring 115may be completely filled with a conductive material, as illustrated inFIG. 3, but is not limited thereto. That is, a conductive material maybe formed along a wall of a via.

In the present exemplary embodiment, the through-wirings 115 may be usedas heat radiation paths, in addition to the function of the electricwirings described above. That is, the through-wirings 115 may beconnected to the electronic component 120 by a wiring layer 152including a metal component, to thereby become an effective heatradiation path, and may be thermally connected to the metal plate 140disposed thereon to contribute to further improving heat radiationcharacteristics of the electronic component package 100.

The electronic component 120 may be an integrated circuit (IC) providedin an amount of several hundreds to several millions of elements or moreintegrated in a single chip, an active element or the like. Theelectronic component 120 may be an electronic component in which anintegrated circuit is packaged in a flip-chip form, if necessary. The ICmay be, for example, an application processor chip, such as a centralprocessor (for example, a CPU), a graphic processor (for example, aGPU), a digital signal processor, a cryptographic processor, amicroprocessor, a microcontroller or the like, but is not limitedthereto.

The electronic component 120 may include electrode pads 120P formed forthe purpose of electrical connection. The electronic pad 120P may beconfigured to electrically, externally connect the electronic component120, and a material of the electrode pad 120P is not particularlylimited as long as it is a conductive material. The conductive materialmay be copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au),nickel (Ni), lead (Pd), titanium (Ti), or alloys thereof, but is notlimited thereto. The electrode pad 120P may have an embedded form or aprotruding form. A surface on which the electrode pads 120P are formedmay be referred to as an active surface, and an opposite surface to theactive surface may be referred to as an inactive surface.

In a case in which the electronic component 120 is an integratedcircuit, the electronic component 120 may have a body (not denoted by areference number), a passivation layer (not denoted by a referencenumber), and the electrode pads 120P. The body may be formed on thebasis of, for example, an active wafer. In this case, silicon (Si),germanium (Ge), gallium arsenide (GaAs) or the like, may be used as abasic material of the body. The passivation layer may serve to protectthe body from external factors, and may be formed of, for example, anoxide layer, a nitride layer or the like, or may be formed of a doublelayer, including an oxide layer and a nitride layer. The electrode pad120P may include a conductive material, such as copper (Cu), aluminum(Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pd), titanium(Ti), or alloys thereof, as described above.

A thickness of the electronic component 120 in a cross section thereofis not particularly limited, but may be changed depending on a kind ofelectronic component 120. For example, in the case in which theelectronic component is an integrated circuit, a thickness of theelectronic component may be about 100 μm to 480 μm, but is not limitedthereto.

In the present exemplary embodiment, an encapsulant 130 may be used inorder to protect the electronic component 120, and the like, as in theform illustrated in FIG. 3, even though it is not a necessary component.A form of the encapsulant 130 is not particularly limited, but may be aform surrounding at least portions of the electronic component 120.However, unlike the form illustrated in FIG. 3, the encapsulant 130 maycover the frame 110 and the electronic component 120, as an example, andmay fill a space between the frame 110 and the electronic component 120within the through-hole. Therefore, the encapsulant 130 may serve as anadhesive and may reduce buckling of the electronic component 120,depending on certain materials.

The certain materials of the encapsulant 130 are not particularlylimited. For example, an insulating material may be used as a materialof the encapsulant 130. In this case, the insulating material may be athermosetting resin, such as an epoxy resin, a thermoplastic resin, suchas a polyimide resin, a resin having a reinforcement material, such asan organic or inorganic filler impregnated in the thermosetting resinand the thermoplastic resin or the like. Alternatively, the insulatingmaterial may be an epoxy molding compound (EMC) or the like.

As described above, in the present exemplary embodiment, an effectiveheat radiation path is provided through the metal plate 140, and thus,an upper surface of the electronic component 120 is not covered by theencapsulant 130, but may be exposed. Therefore, heat may be smoothlyradiated toward the metal plate 140 through an upper portion of theelectronic component 120.

The redistribution layer 150 may be disposed at an opposite side to themetal plate 140 in relation to the electronic component 120, that is,beneath the electronic component 120 in FIG. 3, and may be electricallyconnected to the electronic component 120 and be configured toredistribute electrode pads 120P of the electronic component 120. Tensto hundreds of electrode pads 120P having various functions may beredistributed through the redistribution layer 150 and may be physicallyor electrically, externally connected through connection terminals 190,depending on functions thereof. The redistribution layer 150 may includeinsulating layers 151, wiring layers 152 formed on the insulating layers151, and conductive vias 153 penetrating through the insulating layers151. The redistribution layer 150 may be a single layer or be aplurality of layers.

Insulating materials may be used as materials of the insulating layers151. Particularly, in a case in which photosensitive resins are used asmaterials of the insulating layers, the insulating layers 151 may beformed at a reduced thickness, and a fine pitch may be easilyimplemented. Materials of the insulating layers 151 may be the same aseach other or may be different from each other, if necessary.Thicknesses of the insulating layers 151 are also not particularlylimited. For example, thicknesses of the insulating layers 151, exceptfor the wiring layers 152, may be about 5 μm to 20 μm, and thicknessesof the insulating layers 151, when considering thicknesses of the wiringlayers 152, may be about 15 μm to 70 μm.

The wiring layers 152 may serve as redistribution patterns, and aconductive material, such as copper (Cu), aluminum (Al), silver (Ag),tin (Sn), gold (Au), nickel (Ni), lead (Pd), titanium (Ti), or alloysthereof, may be used as materials of the wiring layers 152.

A surface treatment layer may be further formed on a wiring layerexternally exposed among the wiring layers 152, if necessary. Thesurface treatment layer is not particularly limited as long as it isknown in the related art, and may be formed by, for example,electrolytic gold plating, electroless gold plating, organicsolderability preservative (OSP) or electroless tin plating, electrolesssilver plating, electroless nickel plating/substituted gold plating,direct immersion gold (DIG) plating, hot air solder leveling (HASL) orthe like. This may also be applied to other wiring layers, and the like.

The conductive vias 153 may electrically connect the wiring layers 152,the electrode pads 120P, and the like, formed on different layers toeach other, resulting in an electrical path in the electronic componentpackage 100. Conductive materials, such as copper (Cu), aluminum (Al),silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pd), titanium (Ti),or alloys thereof, may be used as materials of the conductive vias 153.The conductive vias 153 may also be completely filled with a conductivematerial. Alternatively, a conductive material may be formed along wallsof the conductive vias 153. In addition, the conductive vias 153 may beformed in all of the cross section shapes known in the related art, suchas a tapered shape, a cylindrical shape or the like.

The metal plate 140 may serve as the heat radiation path of the heatgenerated in the electronic component 120 or the like, as describedabove, and may block an electromagnetic wave. To this end, a materialhaving a high heat radiation property, such as copper (Cu), aluminum(Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pd), titanium(Ti), or alloys thereof, may be used as a material of the metal plate140.

A first adhesive layer 161 may be interposed between the metal plate 140and the electronic component 120 in order to secure the metal plate 140to the electronic component package 100. The first adhesive layer 161may be formed of an insulating material having a high heat radiationproperty, such as conductive epoxy or the like. According to anotherembodiment, the electronic component package may be implemented in aform in which the electronic component 120 directly contacts the metalplate 140, as in a modified example of FIG. 4, without using the firstadhesive layer 161. In this case, heat radiation characteristics may befurther improved. In a case in which the first adhesive layer is notpresent between the electronic component 120 and the metal plate 140, asin the example of FIG. 4, the metal plate 140 may be coupled to theframe 110 by a second adhesive layer 162.

Again referring to FIG. 3, the second adhesive layer 162 may beinterposed between the metal plate 140 and the frame 110 to couple themetal plate 140 and the frame 110 to each other. In this case, thesecond adhesive layer 162 may be formed of a material different fromthat of the first adhesive layer 161. For example, the second adhesivelayer 162 may be formed of solder having excellent thermal conductivity.Through the form described above, the metal plate 140 may be connectedto the through-wirings 115 of the frame 110 to serve as a heat radiationpath for the heat radiated to a lower portion of the electroniccomponent 120. The metal plate 140 may also be used without using thesecond adhesive layer 162, as in a form illustrated in FIG. 5, similarto the first adhesive layer 161. In this case, the metal plate 140 maydirectly contact the first wiring layer 113 of the frame 110 while beingcoupled to the electronic component 120 by the first adhesive layer 161.

The metal plate 140 may serve as a ground terminal for signal patterns,and the like, formed in the electronic component package, in addition tothe heat radiation function described above. In this case, the metalplate 140 may be electrically connected to portions of the first wiringlayer 113 and the second wiring layer 116 serving as ground terminals.In a case in which the metal plate 140 serves as the ground terminal,the metal plate 140 may be electrically connected to only some of theplurality of through-wirings 115, and may be electrically disconnectedfrom the others, of the plurality of through-wirings 115. To this end, aportion of the second adhesive layer 162 used between the metal plate140 and the frame 110 may be formed of a conductive material, such assolder, and the other regions of the second adhesive layer 162 may beformed of an insulating material, such as an insulating resin.Meanwhile, the metal plate 140 may also be provided only in order toimprove heat radiation efficiency. In this case, the metal plate 140 maybe electrically disconnected from the electronic component 120. To thisend, the second adhesive layer 162 may be formed of an insulatingmaterial, or the through-wirings 115 or the like may be configured notto be electrically connected to the electronic component 120.

Other additional components will be described with reference to FIG. 3.A passivation layer 180 may be configured to protect the redistributionlayer 150 from external physical or chemical damage or the like. Thepassivation layer 180 may have openings 181 exposing at least portionsof the wiring layer 152 of the redistribution layer 150. Although theopenings 181 expose portions of one surface of the wiring layer 152, theopenings 181 may also expose side surfaces of the wiring layer 152, insome cases.

A material of the passivation layer 180 is not particularly limited. Forexample, a solder resist may be used as a material of the passivationlayer 180. In addition, the same material as that of the insulatinglayer 151 of the redistribution layer 150, such as the photosensitiveresin, may also be used as a material of the passivation layer 180. Thepassivation layer 180 is generally a single layer, but may also bemultiple layers.

The connection terminals 190 may be configured to physically andelectrically, externally connect the electronic component package 100.For example, the electronic component package 100 may be mounted on themain board of the electronic device through the connection terminals190. The connection terminals 190 may be disposed on the openings 181,and may be connected to the wiring layer 152 exposed through theopenings 181. Therefore, the connection terminals 190 may also beelectrically connected to the electronic component 120.

The connection terminal 190 may be formed of a conductive material, suchas copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel(Ni), lead (Pd), solder or the like. However, these materials are onlyan example, and a material of the connection terminal 190 is notparticularly limited thereto. The connection terminal 190 may be a land,a ball, a pin or the like. The connection terminal 190 may be formed ofmultiple layers or a single layer. In a case in which the connectionterminal 190 is formed of the multiple layers, the connection terminal190 may include a copper pillar and solder, and in a case in which theconnection terminal 190 is formed of the single layer, the connectionterminal 190 may include tin-silver solder or copper, but is not limitedthereto.

At least one of the connection terminals 190 may be disposed in afan-out region. The fan-out region is a region excluding a region inwhich the electronic component is disposed. That is, the electroniccomponent package 100 according to an example may be a fan-out package.The fan-out package may have excellent reliability as compared to afan-in package, may implement a plurality of input/output (I/O)terminals, and may facilitate a 3D interconnection. In addition, ascompared to a ball grid array (BGA) package, a land grid array (LGA)package or the like, the fan-out package may be mounted on an electronicdevice without a separate board. Thus, the fan-out package may bemanufactured to be thin, and may be price-competitive.

The number, an interval, a disposition form or the like, of theconnection terminals 190 is not particularly limited, and may besufficiently modified by a person skilled in the art, depending ondesign particulars. For example, the number of connection terminals 190may be several tens to several thousands, depending on the number ofelectrode pads 120P of the electronic component 120. However, the numberof connection terminals 190 is not limited thereto, and may also beseveral tens to several thousands or more or several tens to severalthousands or less.

FIG. 6 is a schematic cross-sectional view illustrating another exampleof an electronic component package.

Referring to FIG. 6, an electronic component package 200 according toanother example may include a frame 110, an electronic component 120, anencapsulant 130, a metal plate 240, a redistribution layer 150, and thelike, similar to the exemplary embodiment described above. Hereinafter,components of the electronic component package 200 according to thepresent modified example will be described, and a description forcontents overlapping the contents described above will be omitted, whilemainly contents different from the contents described above will bedescribed.

In the present modified example, an insulating layer 230 may be formedon the electronic component 120 and the metal plate 240. As in a formillustrated in FIG. 6, the insulating layer 230 may be formed on andbeneath the metal plate 240. Therefore, the metal plate 240 may have aform in which it is embedded in the insulating layer 230. In this case,the insulating layer 230 may be formed of the known material having anelectrical insulating property, such as the same material as that of theencapsulant 130. As a more detailed example, the insulating layer 230may be implemented by stacking pre-preg (PPG) layers or the like,several times.

In the exemplary embodiment of FIG. 6, another package may beadditionally disposed on the electronic component 120. Therefore, a POPstructure may be implemented. To this end, the insulating layer 230 mayinclude conductive vias 210. The conductive vias 210 may be connected tothe through-wirings 115 of the frame 110, such that upper and lowerelectrical conduction structures may be obtained. In this case, as inthe form illustrated in FIG. 6, the conductive vias 210 of theinsulating layer 230 may penetrate through the metal plate 240, and maybe electrically disconnected from the metal plate 240.

As set forth above, according to the exemplary embodiments in thepresent disclosure, a package technology capable of effectivelyradiating heat generated from the electronic component may be provided.

In the present disclosure, the terms “lower side”, “lower portion”,“lower surface”, and the like, have been used to indicate a directiontoward a mounted surface of the electronic component package in relationto cross sections of the drawings, the terms “upper side”, “upperportion”, “upper surface”, and the like, have been used to indicate anopposite direction to the direction indicated by the terms “lower side”,“lower portion”, “lower surface”, and the like. However, thesedirections are defined for convenience of explanation only, and theclaims are not particularly limited by the directions defined, asdescribed above.

The meaning of a “connection” of a component to another component in thedescription includes an indirect connection through an adhesive layer aswell as a direct connection between two components. In addition,“electrically connected” means including a physical connection and aphysical disconnection. It can be understood that when an element isreferred to as “first” and “second”, the element is not limited thereby.These terms may be used only for a purpose of distinguishing the elementfrom the other elements, and may not limit the sequence or importance ofthe elements. In some cases, a first element may be referred to as asecond element without departing from the scope of the claims set forthherein. Similarly, a second element may also be referred to as a firstelement.

The term “an exemplary embodiment” used herein does not always refer tothe same exemplary embodiment, and is provided to emphasize a particularfeature or characteristic different from that of another exemplaryembodiment. However, exemplary embodiments provided herein areconsidered to be able to be implemented by being combined in whole or inpart one with another. For example, one element described in aparticular exemplary embodiment, even if it is not described in anotherexemplary embodiment, may be understood as a description related toanother exemplary embodiment, unless an opposite or contradictorydescription is provided therein.

Terms used herein are used only in order to describe an exemplaryembodiment rather than to limit the present disclosure. In this case,singular forms include plural forms unless necessarily interpretedotherwise, based on a particular context.

While exemplary embodiments have been shown and described above, it willbe apparent to those skilled in the art that modifications andvariations could be made without departing from the scope of the presentinvention as defined by the appended claims.

What is claimed is:
 1. An electronic component package comprising: aframe including a through-hole and a through-wiring; an electroniccomponent disposed in the through-hole of the frame; a metal platedisposed on a first side of the electronic component and the frame; anda redistribution layer disposed on a second side of the electroniccomponent opposing the first side and electrically connected to theelectronic component.
 2. The electronic component package of claim 1,further comprising a first adhesive layer interposed between the metalplate and the electronic component.
 3. The electronic component packageof claim 2, wherein the first adhesive layer is formed of conductiveepoxy.
 4. The electronic component package of claim 1, wherein the metalplate and the electronic component directly contact each other.
 5. Theelectronic component package of claim 1, further comprising a secondadhesive layer interposed between the metal plate and the frame.
 6. Theelectronic component package of claim 5, wherein the second adhesivelayer is formed of solder.
 7. The electronic component package of claim1, further comprising a first adhesive layer interposed between themetal plate and the electronic component, and a second adhesive layerinterposed between the metal plate and the frame, wherein the first andsecond adhesive layers are formed of different materials.
 8. Theelectronic component package of claim 1, wherein the frame includes awiring layer formed on an upper surface thereof, and the metal plate andthe wiring layer directly contact each other.
 9. The electroniccomponent package of claim 1, wherein the number of through-wirings isplural, and the metal plate is electrically connected to some of theplurality of through-wirings, and is electrically disconnected from theothers of the plurality of through-wirings.
 10. The electronic componentpackage of claim 1, wherein the metal plate is electrically disconnectedfrom the electronic component.
 11. The electronic component package ofclaim 1, further comprising an insulating layer formed on the electroniccomponent and the metal plate.
 12. The electronic component package ofclaim 11, wherein the insulating layer is formed on and beneath themetal plate, and the metal plate is embedded in the insulating layer.13. The electronic component package of claim 11, wherein the insulatinglayer includes a conductive via connected to the through-wiring of theframe.
 14. The electronic component package of claim 13, wherein theconductive via of the insulating layer penetrates through the metalplate, and is electrically disconnected from the metal plate.
 15. Theelectronic component package of claim 1, further comprising anencapsulant disposed in the through-hole and encapsulating theelectronic component.